Transistor (2N7000)

N-Channel Enhancement Mode Field Effect Transistor
Fairchild Semiconductor

2N7000 Features:
High density cell design for extremely low RDS(ON).
Voltage controlled small signal switch.
Rugged and Relaible.
High saturation current capability.

These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 400mA DC and can deliver pulsed currents up to 2A. These products are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications.